PART |
Description |
Maker |
UPC1658G UPC1658G-E1 |
RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER Low Noise, High Frequncy Si MMIC Amplifier(低噪声高频率放大 LOW NOISE/ HIGH FREQUENCY Si MMIC AMPLIFIER LOW NOISE, HIGH FREQUENCY Si MMIC AMPLIFIER LOW NOISE HIGH FREQUENCY Si MMIC AMPLIFIER
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NEC Corp. NEC[NEC]
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HA2-5137883 HA7-5137883 HA-5137_883 HA4-5137883 FN |
DIODE SCHOTTKY DUAL COMMON-CATHODE 30V 350mW 0.38V-vf 200mA-IFM 1mA-IF 0.2uA-IR SOT-23 3K/REEL 60MHz/ Ultra Low Noise/ Precision Operational Amplifier 60MHz, Ultra Low Noise, Precision Operational Amplifier 60MHz Ultra Low Noise Precision Operational Amplifier From old datasheet system
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INTERSIL[Intersil Corporation]
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AN1438 |
LOW NOISE AMPLIFIER OPTIMIZED FOR MINIMUM NOISE FIGURE AT 1.9GHZ USING START420
|
SGS Thomson Microelectronics
|
2SK3117 |
N CHANNEL MOS TYPE (LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS)
|
Toshiba Corporation Toshiba Semiconductor
|
OP-37AJ OP-37AZ OP-37BJ OP-37BZ OP-37CJ OP-37CZ OP |
LOW NOISE, PRECISION, HIGH SPEED OPERATIONAL AMPLIFIER(AVCL>=5) 703.02 Kbytes LOW NOISE, PRECISION, HIGH SPEED OPERATIONAL AMPLIFIER(AVCL>=5) LOW NOISE, PRECISION, HIGH SPEED OPERATIONAL AMPLIFIER(AVCL>=5) OP-AMP, 200 uV OFFSET-MAX, 63 MHz BAND WIDTH, CQCC20
|
AD[Analog Devices] Analog Devices, Inc.
|
K4S64323LF-DG_S15 K4S64323LF-DG_S1H K4S64323LF-DG_ |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90 2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-SOIC -55 to 125 Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125 Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125 Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP -55 to 125
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
TGA4600-EPU |
60 GHz Low-Noise Amplifier 60GHz Low Noise Amplifier
|
TRIQUINT[TriQuint Semiconductor]
|
IDT70914S25PI IDT70914S25PB IDT70914S25P 70914_DS_ |
Low-Noise JFET-Input Operational Amplifier 14-PDIP 0 to 70 高6KK的9)同步双端口RAM High Speed Low-Noise JFET-Input Quad Operational Amplifier 14-CFP -55 to 125 4K X 9 DUAL-PORT SRAM, 25 ns, PQCC68 High Speed Low-Noise JFET-Input Quad Operational Amplifier 14-CDIP -55 to 125 4K X 9 MULTI-PORT SRAM, 25 ns, PQCC68 High Speed Low-Noise JFET-Input Quad Operational Amplifier 20-LCCC -55 to 125 HIGH SPEED 36K (4K X 9) SYNCHRONOUS DUAL-PORT RAM From old datasheet system
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Integrated Device Technology, Inc. IDT[Integrated Device Technology]
|
K4S64323LF-DN15 K4S64323LF-DN15-PB K4S64323LF-DN1H |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90 Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 0 to 70 2Mx32移动SDRAM 90FBGA Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 2Mx32移动SDRAM 90FBGA Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP 0 to 70 2Mx32移动SDRAM 90FBGA Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125 2Mx32移动SDRAM 90FBGA Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125 2Mx32移动SDRAM 90FBGA 2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA Dual Rail-To-Rail Micropower Operational Amplifier 8-SOIC 0 to 70
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
AD8021ARM-REEL AD8021ARM-REEL7 AD8021ARZ-REEL7 AD8 |
Low-Noise, High Speed Amplifier for 16-Bit Systems Low Noise, High Speed Amplifier for 16-Bit Systems 1 CHANNEL, VIDEO AMPLIFIER, PDSO8
|
Analog Devices, Inc. ANALOG DEVICES INC
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